Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Orbital-assisted metal-insulator transition in VO2.

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation ...

متن کامل

Metal-insulator Phase Transition in Vo2

-The effects of doping and uniaxial stress on the structural and magnetic properties of V02 are reviewed. Important electron-electron correlation effects are deduced : (i) in the metallic phase from the results obtained in V I ~ N ~ ~ O ~ alloys, (ii) in the insulating phases of pure V02 at ambiant pressure (MI), under uniaxial stress or in the presence of Cr impurities (T and M2). Discovered i...

متن کامل

investigation of the electronic properties of carbon and iii-v nanotubes

boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...

15 صفحه اول

Electrical oscillations induced by the metal-insulator transition in VO2

We systematically investigate the characteristics of an electrical oscillation observed in two-terminal vanadium dioxide VO2 devices. These oscillations are observed at room temperature in a simple electrical circuit without inductive components. The circuit is composed only of a dc voltage source, the VO2 device, and a standard resistor connected in series with the device. We explain why the o...

متن کامل

Metal-insulator transition in VO2: a Peierls-Mott-Hubbard mechanism

The electronic structure of VO2 is studied in the frameworks of local density approximation (LDA) and LDA+U to give a quantitative description of the metal-insulator (MI) transition in this system. It is found that, both structural distortion and the local Coulomb interaction, play important roles in the transition. An optical gap, comparable to the experimental value has been obtained in the m...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Crystals

سال: 2020

ISSN: 2073-4352

DOI: 10.3390/cryst10080631